| Onderdeel nummer |
W9816G6IH-6 |
NTTS2P02R2 |
| Fabrikant |
Winbond Electronics Corporation |
onsemi |
| Beschrijving |
IC DRAM 16MBIT PAR 50TSOP II |
MOSFET P-CH 20V 2.4A MICRO8 |
| hoeveelheid beschikbaar |
3044 |
2636 |
| Datasheets |
1.CY7C1314JV18-250BZXC.pdf2.W9816G6IH-6.pdf3.W9816G6IH-6.pdf4.87200FG/K1.pdf5.W25Q80BVSSIG.pdf |
1.T2322B.pdf2.HCPL2601.pdf3.NTTS2P02R2.pdf |
| Download |
|
|
| Schrijf cyclus tijd - woord, pagina |
- |
|
| Voltage - Levering |
3V ~ 3.6V |
|
| Technologie |
SDRAM |
MOSFET (Metal Oxide) |
| Leverancier Device Pakket |
50-TSOP II |
8-MSOP |
| Serie |
- |
- |
| Verpakking / doos |
50-TSOP (0.400', 10.16mm Width) |
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
| Pakket |
Tray |
Tape & Reel (TR) |
| Temperatuur |
0°C ~ 70°C (TA) |
-55°C ~ 150°C (TJ) |
| montage Type |
Surface Mount |
Surface Mount |
| geheugen |
Volatile |
|
| Geheugen grootte |
16Mbit |
|
| Geheugenorganisatie |
1M x 16 |
|
| Geheugeninterface |
Parallel |
|
| Geheugenformaat |
DRAM |
|
| Klokfrequentie |
166 MHz |
|
| Base Productnummer |
W9816G6 |
NTTS2P |
| Access Time |
5 ns |
|
| VGS (th) (Max) @ Id |
1.4V @ 250µA |
|
| Vgs (Max) |
±8V |
|
| Rds On (Max) @ Id, VGS |
90mOhm @ 2.4A, 4.5V |
|
| Vermogensverlies (Max) |
780mW (Ta) |
|
| Input Capacitance (Ciss) (Max) @ Vds |
550 pF @ 16 V |
|
| Gate Charge (Qg) (Max) @ Vgs |
18 nC @ 4.5 V |
|
| FET Type |
P-Channel |
|
| FET Feature |
- |
|
| Aandrijfspanning (Max. Rds Aan, Min. Rds Aan) |
2.5V, 4.5V |
|
| Drain naar de Bron Voltage (Vdss) |
20 V |
|
| Current - Continuous Drain (Id) @ 25 ° C |
2.4A (Ta) |
|
